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DMP3105LVT
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-30
±12
Units
V
V
Continuous Drain Current (Note 4) V GS = -10V
Continuous Drain Current (Note 4) V GS = -4.5V
Continuous Drain Current (Note 5) V GS = -10V
Continuous Drain Current (Note 5) V GS = -4.5V
Maximum Continuous Body Diode Forward Current
Pulsed Drain Current (10us pulse, duty cycle=1%)
Steady
State
Steady
State
Steady
State
Steady
State
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
I S
I DM
3.1
2.5
2.7
2.2
3.9
3.1
3.3
2.7
2.2
20
A
A
A
A
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
P D
R θ JA
R θ Jc
T J, T STG
Value
1.15
108
1.75
72
23.4
-55 to +150
Units
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-30
?
?
?
?
?
?
-100
± 100
V
nA
nA
V GS = 0V, I D = -250 μ A
V DS = -30V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
-0.5
-0.9
-1.5
V
V DS = V GS , I D = -250 μ A
?
65
75
V GS = -10V, I D = -4.2A
Static Drain-Source On-Resistance
R DS (ON)
?
75
98
m Ω
V GS = -4.5V, I D = -4.0A
?
98
150
V GS = -2.5V, I D = -3.0A
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
?
?
5
-0.7
?
-1.0
S
V
V DS = -15V, I D = -4.0A
V GS = 0V, I S = -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = -4.5V)
Total Gate Charge (V GS = -10.0V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R G
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
?
?
839
47
43
12.3
9.0
19.8
1.6
1.1
9.7
17.7
269
64
?
?
?
?
?
?
?
?
?
?
?
?
pF
Ω
nC
ns
V DS = -15V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V DS = -15V, I D = -4.0A
V GS = -10V, V DD = -15V, R G = 6 Ω ,
I D = -1A
Notes:
4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMP3105LVT
Document number: DS35504 Rev. 2 - 2
2 of 6
www.diodes.com
November 2011
? Diodes Incorporated
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